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GE IC660ELB912G MicroGENI Daughterboard for Genius I/O Systems

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The GE IC660ELB912G is a high-performance MicroGENI daughterboard designed specifically for Genius I/O systems. It offers reliable and efficient communication capabilities, making it an essential component for industrial control applications.

SKU: 2928000

Product Model:IC660ELB912G

Brand:GE

Power Requirement:5 Volts DC, 400 milliamps

Number of Supported Devices:30 per daughtercard

Communication Rate:38.4K, 76.8K, 153.6K standard, or 153.6K extended baud rates

Operating Voltage:220 (V)

Output Frequency:30 (kHz)

    The GE IC660ELB912G MicroGENI daughterboard is a high-performance component designed for integration into Genius I/O systems, providing seamless communication capabilities in industrial environments.

    This daughterboard supports up to 30 devices per daughtercard, ensuring scalability and flexibility for various control applications.

    With a power requirement of 5 volts DC at 400 milliamps, the IC660ELB912G ensures reliable operation even under demanding conditions.

    The communication rate can be set to 38.4K, 76.8K, 153.6K standard, or 153.6K extended baud rates, allowing for tailored performance to meet specific project requirements.

    Built with precision engineering, the IC660ELB912G MicroGENI daughterboard offers durability and longevity, making it an ideal choice for critical industrial automation projects.

GE IC660ELB912G

GE IC660ELB912G

GE IC660ELB912G




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